ANALYSIS OF Sb-IMPLANTED SILICON BY (p, p) SCATTERING AND HALL MEASUREMENTS
- 1 June 1967
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 10 (11) , 323-325
- https://doi.org/10.1063/1.1754830
Abstract
The annealing behavior of Si crystals, implanted with ∼1015 Sb ions/cm2 at 40 keV, has been studied by observing the orientation dependence of the scattering yield of 1.0‐MeV protons and also by electrical measurements. The scattering measurements provide information on the sites of the implanted atoms and on the extent of lattice disorder. After a room temperature implant, the lattice is heavily damaged, with the Sb occupying random (or interstitial) positions. After annealing at 650°C, ∼75% of the Sb is substitutional with very little damage remaining. Comparable results are obtained in a 400°C implant.Keywords
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