Preferential Orientation of Titanium Dioxide Polycrystalline Films Using Atmospheric CVD Technique
Open Access
- 1 January 1997
- journal article
- Published by Ceramic Society of Japan in Journal of the Ceramic Society of Japan
- Vol. 105 (1223) , 551-554
- https://doi.org/10.2109/jcersj.105.551
Abstract
Crystalline orientation and growth rate of titanium dioxide polycrystalline films deposited using an air-opened chemical vapor deposition apparatus were investigated. The deposition rate of the titanium dioxide films depends on the substrate temperature and the vaporizing temperature of titanium tetra-isopropoxide. X-ray diffraction analysis revealed that the growth orientation of the films was mainly varied with the vaporizing temperature. At relatively low vaporizing temperature, the films were consisted of ‹001›-oriented columnar crystals grown at a minimum deposition rate of 4nm/s. In contrast, ‹100›-and ‹211›-oriented crystallites grew with a maximum deposition rate of 45nm/s at relatively high vaporizing temperature. These results suggest that the concentration of reactant, which is strongly dependent upon the vaporizing temperature, is one of factors which decide the growth rate of each crystal face.Keywords
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