Interfacial neutral- and charged-dangling-bond densities between hydrogenated amorphous silicon and hydrogenated amorphous silicon nitride in top nitride and bottom nitride structures
- 15 May 1995
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 66 (20) , 2718-2720
- https://doi.org/10.1063/1.113499
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