Characteristics of p-channel SOI LDMOS Transistor with Tapered Field Oxides

• 1 September 1999
• journal article
• Published by Wiley in ETRI Journal
• Vol. 21  (3) , 22-28
• https://doi.org/10.4218/etrij.99.0199.0304

Abstract

Keywords

• OPTIMIZED
• TAPERED
• FIELD OXIDE
• LDMOS TRANSISTORS
• DRIFT
• CIRCUITS
• VOLTAGE
• UNIFORMITY