Photomagnetic Anneal Properties of Silicon-Doped Yttrium Iron Garnet
- 30 December 1968
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 21 (27) , 1805-1807
- https://doi.org/10.1103/physrevlett.21.1805
Abstract
Torque measurements have been made at 4.2°K on crystals of silicon-doped yttrium iron garnet which were irradiated with infrared light. The radiation caused large photomagnetic anneal effects which were found to depend on the plane of polarization of the light.Keywords
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