Spin splitting in the electron subband of asymmetric quantum wells: The multiband envelope function approach
- 15 December 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 58 (23) , 15375-15377
- https://doi.org/10.1103/physrevb.58.15375
Abstract
The dependence on carrier concentration of the anisotropic spin splitting of the lowest electron subband in asymmetrically doped quantum wells is determined. We employ the multiband envelope function approach based on 8×8 and Hamiltonians. Our self-consistent calculations yield results in quantitative agreement with experimental data obtained from inelastic light scattering.
Keywords
This publication has 18 references indexed in Scilit:
- Spin splitting of conduction energies in GaAs-As heterojunctions at B=0 and B≠0 due to inversion asymmetryPhysical Review B, 1997
- Gate Control of Spin-Orbit Interaction in an Inverted IGAs/IAAs HeterostructurePhysical Review Letters, 1997
- Nonparabolicity in the conduction band of II–VI semiconductorsSolid State Communications, 1993
- Relativistic band structure and spin-orbit splitting of zinc-blende-type semiconductorsPhysical Review B, 1988
- Electron states in GaAs/Ga1−xAlxAs heterostructures: Nonparabolicity and spin-splittingSuperlattices and Microstructures, 1986
- Oscillatory effects and the magnetic susceptibility of carriers in inversion layersJournal of Physics C: Solid State Physics, 1984
- Precession of the Spin Polarization of Photoexcited Conduction Electrons in the Band-Bending Region of GaAs (110)Physical Review Letters, 1984
- Nonparabolicity and warping in the conduction band of GaAsSolid State Communications, 1984
- Quantum Theory of SolidsAmerican Journal of Physics, 1965
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957