Spin splitting in the electron subband of asymmetric GaAs/AlxGa1xAs quantum wells: The multiband envelope function approach

Abstract
The dependence on carrier concentration of the anisotropic spin splitting of the lowest electron subband in asymmetrically doped GaAs/AlxGa1xAs quantum wells is determined. We employ the multiband envelope function approach based on 8×8 and 14×14kp Hamiltonians. Our self-consistent calculations yield results in quantitative agreement with experimental data obtained from inelastic light scattering.