Strained-Layer Epitaxy of Germanium-Silicon Alloys
- 11 October 1985
- journal article
- research article
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 230 (4722) , 127-131
- https://doi.org/10.1126/science.230.4722.127
Abstract
Despite the dominant position of silicon in semiconductor electronics, its use is ultimately limited by its incompatibility with other semiconducting materials. Strained-layer epitaxy overcomes problems of crystallographic compatibility and produces high-quality heterostructures of germanium-silicon layers on silicon. This opens the door to a range of electronic and photonic devices that are based on bandstructure physics.Keywords
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