Latchup-free Schottky-barrier CMOS
- 1 February 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 30 (2) , 110-118
- https://doi.org/10.1109/t-ed.1983.21083
Abstract
A common failure mechanism in bulk CMOS integrated circuits is due to the latchup of the parasitic SCR structure. Using Schottky-barrier junctions for the source and drain of the p-channel transistors eliminates the p-n-p-n structure. A technology utilizing platinum-silicide p-channel source and drain and ion-implanted n-channel source and drain was realized demonstrating latchup resistance without many sacrifices inherent with other methods. Anomalies in the p-MOSFET characteristics are reported and discussed.Keywords
This publication has 0 references indexed in Scilit: