Microwave Inductors on Silicon Substrates

1 September 1994

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

Vol. 2, 1042-1047
https://doi.org/10.1109/euma.1994.337350

Abstract

Microwave inductive structures are fabricated on high resistivity (3 k to 7 k Ω-cm, measured) Si, GaAs, and quartz substrates under two conditions: metal-substrate and metal-insulator-substrate. The insulators are sandwiches of: SiO₂(field)/Si₃N₄ and SiO₂(field)/Si₃N₄ with SiO₂(gate). The measured unloaded Q of single layer spirals and meander inductors on Si substrates are comparable to the measured unloaded Q of the same structures realized on GaAs and quartz substrates. These results are in agreement with the ones obtained using coplanar transmission lines (CPW's), which further confirm that high resistivity Si can be used as a microwave substrate.

Keywords

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