Defect-related infrared photoluminescence in Ge+-implanted SiO2 films
- 26 April 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (17) , 2420-2422
- https://doi.org/10.1063/1.123867
Abstract
SiO 2 films with Ge+ implantation at an energy of 60 keV and a dose of 1×1016 cm−2, followed by annealing at different temperature, exhibit a broad infrared photoluminescence (PL) at room temperature under an excitation of the 514.5 nm line of Ar+ laser. With increasing the annealing temperature, the intensity of the infrared PL band decreases, its full width at half maximum increases, and its energy redshifts. Spectral analysis and some experimental results from Raman scattering, electron spin resonance, and infrared spectroscopy strongly suggest that the infrared PL is mainly related to interfacial oxygen-deficient-type defects between the oxide and Ge nanocrystals.Keywords
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