The space-charge region around a metallic platelet in a semiconductor
- 1 January 1993
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 8 (1) , 45-49
- https://doi.org/10.1088/0268-1242/8/1/007
Abstract
The problem of the potential of a flat metallic disc embedded in a semiconductor and giving rise to a Schottky barrier is studied analytically. The space-charge region around the disc is approximately spheroidal; expressions are given which describe the size of this region and the space-charge potential. The theory is applied to platelet-shaped precipitates of NiSi2 in silicon.Keywords
This publication has 7 references indexed in Scilit:
- A theoretical study of the charge collection contrast of localized semiconductor defects with arbitrary recombination activitySemiconductor Science and Technology, 1992
- Recombination properties of structurally well defined NiSi2 precipitates in siliconApplied Physics Letters, 1991
- Precipitation behaviour of nickel in siliconPhilosophical Magazine A, 1989
- Ion-matrix sheath structure around cathodes of complex shapeJournal of Physics D: Applied Physics, 1989
- Schottky-barrier heights of single-crystalon Si(111): The effect of a surfacep-njunctionPhysical Review B, 1986
- On the injection level dependence of the minority carrier lifetime in defected silicon substratesSolid-State Electronics, 1984
- Electronic processes at grain boundaries in polycrystalline semiconductors under optical illuminationIEEE Transactions on Electron Devices, 1977