Anisotropy of defect creation in electron-irradiated iron crystals
- 15 December 1976
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 14 (12) , 5303-5313
- https://doi.org/10.1103/physrevb.14.5303
Abstract
Single crystals of α-iron were irradiated perpendicularly to the (100), (110), and (111) planes with electrons in the range 0.35-1.7 MeV and their electrical resistivity change rates were measured. A geometrical model of the threshold-energy surface for atomic displacement in a bcc lattice produces a fit to the experimental data leading to the following values for the threshold energies in the principal crystal directions: eV, eV, and eV. The specific resistivity of a Frenkel pair is deduced to μΩcm/at.%. From the obtained we derived an interatomic potential of the Born-Mayer type, valid in the range Å. We propose as a good choice: eV. The recovery due to isochronal annealing during stage I, after irradiation at different electron energies, was measured and related to specific recovery mechanisms. Thus, the first important substage, (∼ 66 K), is due to the recovery of close Frenkel pairs created in the direction, while a comparison of calculated cross sections suggests that (∼ 87 K) possibly stems from close pairs. Substage (90-110 K) is complex; its first part, below 100 K, originates mostly from defects produced in the direction and the second part, above 100 K, together with , principally originates from defects produced in the direction.
Keywords
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