Diffusion-induced disordering of Ga 0.47 In 0.53 As/InP multiple quantum wells with zinc
- 21 July 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 24 (15) , 910-911
- https://doi.org/10.1049/el:19880619
Abstract
Diffusing zinc into Ga0.47In0.53As/InP MQW layers is found to cause strong intermixing of the group III elements, which changes the composition in the quantum wells and barriers. As a result of this disordering the MQW bandgap is reduced in energy and the photoluminescence emission peak moves to longer wavelength.Keywords
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