Deep-level transient spectroscopic investigation of the EL2 deep-level in metalorganic chemical vapour deposited Ga1−xInxAs epilayers

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Abstract
The thermal activation energy of the EL2 deep level in low-pressure metalorganic chemical vapour deposited Ga1−xInxAs epilayers has been determined by deep-level transient spectroscopy. Variation of the deposition conditions, which included a change in the substrate orientation, resulted in different dependencies of the EL2 thermal activation energy upon the epilayer indium content. In all cases a decrease in this deep-level property was observed for increasing indium content in the epilayers. Although the cause of this variation in the dependence of the thermal activation energy upon the epilayer indium content could not be identified in this work, it can be shown that it is not associated with different amounts of residual strain or impurities in the epilayers.

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