High- and low-frequency steady-state MIS photovoltage

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Abstract
The high- and low-frequency photovoltage of a MIS structure has been investigated at different interface potentials and steady-state electron/hole injection or extraction mode of operation. The main attention is paid to low-frequency photovoltage. It is shown that for the potential range corresponding to equal rates of electron and hole capture by surface states the photovoltage has a peculiarity connected with a phenomenon of synchronic recharging of surface-state continuum. The results of the present work may be used in photo-electrical investigations of a semiconductor-insulator interface as well as for the calculation of MIS photocell response.

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