Higher Absorption Edges inSiC
- 15 August 1968
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 172 (3) , 769-772
- https://doi.org/10.1103/physrev.172.769
Abstract
The absorption of SiC was measured for photon energies up to 4.9 eV, where the absorption coefficient is 4.6× . Samples as thin as 1.8μ were prepared by grinding and polishing. Indirect absorption edges were found at 3.0, 3.7, and 4.1 eV. A fourth absorption edge at 4.6 eV could not be positively identified as direct or indirect.
Keywords
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