In situ reflectance difference spectroscopy of ZnSe-based semiconductor surfaces
- 1 January 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 170 (1-4) , 188-192
- https://doi.org/10.1016/s0022-0248(96)00582-9
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Photoassisted growth and nitrogen doping of ZnSeJournal of Crystal Growth, 1997
- Light emitting diodes from MOVPE-grown p- and n-doped II–VI compoundsJournal of Crystal Growth, 1996
- In situ optical monitoring of the movpe growth of ZnSe on GaAsAdvanced Materials for Optics and Electronics, 1994
- Selenium- and tellurium-terminated GaAs(100) surfaces observed by scanning tunneling microscopyPhysical Review B, 1994
- Low temperature growth and characterization of ZnSe films grown on GaAsJournal of Electronic Materials, 1993
- Arsenic dimers and multilayers on (001)GaAs surfaces in atmospheric pressure organometallic chemical vapor depositionApplied Physics Letters, 1992
- I n s i t u investigation of the low-pressure metalorganic chemical vapor deposition of lattice-mismatched semiconductors using reflectance anisotropy measurementsJournal of Applied Physics, 1990
- Surface reconstruction and stabilization in MOMBE of ZnSe revealed by in-situ RHEED monitoringJournal of Crystal Growth, 1990
- Application of reflectance difference spectroscopy to molecular-beam epitaxy growth of GaAs and AlAsJournal of Vacuum Science & Technology A, 1988
- Above-bandgap optical anisotropies in cubic semiconductors: A visible–near ultraviolet probe of surfacesJournal of Vacuum Science & Technology B, 1985