High-resolution imaging with the stigmatic ion microscope

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Abstract
An exposition of the lateral image resolution specific to the ion optics in the stigmatic ion microscope (based on ion sputtering mass spectrometry) is presented, with emphasis on investigations leading to the current level of understanding of high-resolution operation. Modifications are presented for the CAMECA IMS-3f ion microscope which extends instrumental magnifications to over 2000 diameters and smallest resolvable distances in undistorted images to 0.1 μm. This is necessary to keep pace with the increasingly stringent requirements for the analysis of the shrinking features in fabricated very-large-scale integration devices. Conditions for ensuring the formation of undistorted images are given, and the performance of the instrument under these conditions is evaluated. The current concerns of ion microscopic image analysis are then presented and discussed.