Low-temperature (10 K) photoluminescence of Ga1−xInxPyAs1−y quantum wells grown by metalorganic chemical vapor deposition

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Abstract
Ga1−x Inx As1−y Py /InP (x=0.72, y=0.39) lattice‐matched quantum wells (QWs) are grown by low‐pressure metalorganic chemical vapor deposition on (100) and 3° misoriented substrates, using different variations of growth technique. Low‐temperature (10 K) photoluminescence is used to characterize the QWs. We find that substrates oriented closely to (100) (no intentional misorientation) produce QWs of consistently higher quality as judged by the width of the n=1 photoluminescence peak. The use of growth interruptions at the well interfaces severely degrades the QW quality. The narrowest peak observed is 5.8 meV wide from a 70‐Å‐wide well.