Repassivation and ion migration in Pd-implanted TiO2layers on Ti

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Abstract
TiO2 layers on Ti have been formed by anodic polarization.Ion implantation on Pd+ of 70 or 200 keV energy yields a doped amorphous oxide. Subsequent repassivation by anodization to potentials below the formation potential causes recrystallization. This recrystallization starts at the interface to the underlying metal, demonstrating for the first time solid phase epitaxial regrowth under the influence of an electrical field. In the amorphous phase the activation energyfor ion migration is sufficiently lowered to result in three times thicker oxide layersthan the original ones. During recrystallization also Pd ions start migrating towards the surface and dissolve into the electrolyte.