X-ray EMISSION BANDS AND ELECTRONIC STRUCTURE OF SILICON AND OF SOME SILICON, SULPHUR, AND ALUMINUM COMPOUNDS

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Abstract
X-ray Kβ- and L2, 3-emission bands are presented for pure silicon, for silicon in the intermetallic compounds Ca2Si, Ca5Si3, CaSi, CaSi2 and Ca0,75Sr0,25Si2, for aluminum in AlN and AlSb, and for sulphur in ZnS, CdS and FeS2. For pure silicon the experimental results are compared with recent calculations of the density of states and the intensity distribution of the K- and L-emission bands. The experimental and theoretical intensity distributions agree fairly well. In the case of ZnS an interpretation of the S Kβ- and S L2, 3-emission bands is given taking into account different energy band calculations

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