Deep traps in semi-insulating GaAs: Cr revealed by photo-sensitive ESR
- 1 October 1976
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 20 (2) , 143-146
- https://doi.org/10.1016/0038-1098(76)90472-5
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Deep traps in GaAs revealed at high resolution by simple fast photocapacitance methodsJournal of Electronic Materials, 1976
- A study of deep levels in GaAs by capacitance spectroscopyJournal of Electronic Materials, 1975
- Optical absorption on localized levels in gallium arsenidePhysical Review B, 1974
- EPR ofin II-VI latticesPhysical Review B, 1974
- Infrared Absorption in Some II-VI Compounds Doped with CrPhysical Review B, 1970
- Two-Carrier Photothermoelectric Effects in GaAsJournal of Applied Physics, 1970
- Electron-Paramagnetic-Resonance Investigation of the Superhyperfine Structure of Iron-Group Impurities in II-VI CompoundsPhysical Review B, 1966
- Electron Paramagnetic Resonance of Iron in Gallium ArsenidePhysical Review B, 1963