n-Type In2S3 thin films prepared by gas chalcogenization of metallic electroplated indium: Photoelectrochemical characterization
- 1 August 1988
- journal article
- Published by Elsevier in Solar Energy Materials
- Vol. 17 (5) , 357-368
- https://doi.org/10.1016/0165-1633(88)90017-2
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Thermodynamic stability of n-In2S3 photoelectrodesElectrochimica Acta, 1987
- Synthesis and photoelectrochemistry of In2S3Solar Energy Materials, 1986
- Slurry painted CuInS2 and CuIn5S8 layers: Preparation and photoelectrochemical characterizationSolar Energy Materials, 1985
- Structural and Solar Conversion Characteristics of the ( Cu2Se ) x ( In2Se3 ) 1 − x SystemJournal of the Electrochemical Society, 1985
- Optical Absorption Edge Investigation of CdIn2S4 and β‐In2S3 CompoundsPhysica Status Solidi (b), 1985
- Mechanisms of Charge Transfer at the Semiconductor‐Electrolyte Interface: I . Kinetics of Electroreduction at Dark of and in Aqueous Solution on a Sintered Nb‐doped Electrode: Influence of pHJournal of the Electrochemical Society, 1984
- Ternary Chalcogenide‐Based Photoelectrochemical Cells: II . The Polysulfide SystemJournal of the Electrochemical Society, 1982
- Investigation on the Kinetics of Electroreduction Processes at Dark TiO2 and SrTiO3 Single Crystal Semiconductor ElectrodesJournal of the Electrochemical Society, 1980
- Observation and Analysis of Surface States on TiO2 Electrodes in Aqueous ElectrolytesJournal of the Electrochemical Society, 1980
- Vapour growth of three In2S3 modifications by iodine transportJournal of Crystal Growth, 1975