NEGATIVE RESISTANCE, CONDUCTIVE SWITCHING, AND MEMORY EFFECT IN SILICON-DOPED YTTRIUM-IRON GARNET CRYSTALS
- 1 September 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 17 (5) , 199-201
- https://doi.org/10.1063/1.1653364
Abstract
A current‐controlled negative resistance has been found in thin single‐crystal wafers of silicon‐doped yttrium‐iron garnet (Si‐YIG). Switching properties have been examined, and relaxation oscillations in the range 0.5–1 MHz have been established in the negative resistance region. A conductive memory state having a behavior similar to that occurring in amorphous semiconductors has also been seen.Keywords
This publication has 16 references indexed in Scilit:
- Model for the Resistive-Conductive Transition in Reversible Resistance-Switching SolidsJournal of Applied Physics, 1970
- SWITCHING AND NEGATIVE RESISTANCE IN THIN FILMS OF NICKEL OXIDEApplied Physics Letters, 1970
- Switching in Magnetite: A Thermally Driven Magnetic Phase TransitionPhysical Review Letters, 1969
- Dynamics of the Electric-Field-Induced Conductivity Transition in MagnetitePhysical Review Letters, 1969
- Conduction Phenomena in Thin Layers of Iron OxidePhysical Review B, 1969
- Reversible Electrical Switching Phenomena in Disordered StructuresPhysical Review Letters, 1968
- Switching phenomena in titanium oxide thin filmsSolid-State Electronics, 1968
- A molybdenum-oxide negative-resistance deviceProceedings of the IEEE, 1965
- Switching properties of thin Nio filmsSolid-State Electronics, 1964
- Negative resistance in copper-doped ferric oxide ceramicProceedings of the IEEE, 1964