The Physical and Electrical Properties of Buried Nitride Soi Structures Synthesized By Nitrogen Ion Implantation
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Surface Silicon Crystallinity and Anomalous Composition Profiles of Buried SiO2 and Si3N4 Layers Fabricated by Oxygen and Nitrogen Implantation in SiliconJapanese Journal of Applied Physics, 1982
- Formation of silicon nitride compound layers by high-dose nitrogen implantationJournal of Applied Physics, 1980