Near-interface characterization of diamond films on silica and silicon

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Abstract
The near-interface structure of diamond films grown from a methane and hydrogen gas mixture by microwave plasma enhanced chemical vapor deposition has been studied. Freestanding diamond films grown on both silica and silicon at two different methane concentrations were analyzed by scanning and transmission electron microscopies, electron diffraction, Raman spectroscopy, and secondary ion mass spectroscopy. It was found that the substrate chemistry greatly influenced the nature of the carbon initially deposited on the substrate surface. Diamond formed large flat contact areas on silicon, whereas on silica a particulate type of intermediate layer formed first because of the chemical reactions occurring on and/or with the surface. It was found that the phase content of the films was greatly affected by the methane concentration in hydrogen. At the low (1.0% or less) methane concentrations in hydrogen, phase pure diamond formed; while at the high (5.0%) methane concentration in hydrogen, graphite and disordered carbon were codeposited along with diamond during the early growth stages. Silicon carbide was detected at the diamond interfaces which appeared in discrete areas on silica as opposed to a rather continuous layer as is believed to form on silicon.

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