Avalanching in GaAs p-π-p structures
- 1 February 1967
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 28 (2) , 171-183
- https://doi.org/10.1016/0022-3697(67)90106-0
Abstract
No abstract availableThis publication has 40 references indexed in Scilit:
- Charge Multiplication in GaP p-n JunctionsJournal of Applied Physics, 1965
- EVIDENCE FOR AVALANCHE INJECTION LASER IN P-TYPE GaAsApplied Physics Letters, 1965
- Avalanche Breakdown in Gallium ArsenideJunctionsPhysical Review B, 1962
- Charge Multiplication in GaP p-n JunctionsJournal of Applied Physics, 1962
- Electrical Conductivity in N-Type InSb Under Strong Electric FieldJournal of the Physics Society Japan, 1958
- High Electric Field Effects in-Indium AntimonidePhysical Review B, 1958
- Rate Processes and Low-Temperature Electrical Conduction in-Type GermaniumPhysical Review B, 1958
- Avalanche Multiplication and Electron Mobility in Indium Antimonide at High Electric Fields†Journal of Electronics and Control, 1958
- Impact ionization of impurities in germaniumJournal of Physics and Chemistry of Solids, 1957
- Avalanche Breakdown in SiliconPhysical Review B, 1954