Magnetotransport of electrons in arrays of wires in Si/Si0.7Ge0.3 heterostructures
- 1 July 1996
- journal article
- Published by Elsevier in Surface Science
- Vol. 361-362, 673-676
- https://doi.org/10.1016/0039-6028(96)00497-9
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- One-dimensional transport of electrons in Si/Si0.7Ge0.3 heterostructuresApplied Physics Letters, 1995
- Identification of a Mobility-Limiting Scattering Mechanism in Modulation-Doped Si/SiGe HeterostructuresPhysical Review Letters, 1994
- Electron transport through antidot superlattices in Si/heterostructuresPhysical Review B, 1994
- Fabrication of in-plane-gate transistor structures by focused laser beam-induced Zn doping of modulation-doped GaAs/AlGaAs quantum wellsApplied Physics Letters, 1994
- High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layerSemiconductor Science and Technology, 1992
- In-plane-gated quantum wire transistor fabricated with directly written focused ion beamsApplied Physics Letters, 1990
- Boundary scattering in quantum wiresPhysical Review Letters, 1989
- Landau band conductivity in a two-dimensional electron system modulated by an artificial one-dimensional superlattice potentialPhysical Review Letters, 1989
- Magnetoresistance Oscillations in a Two-Dimensional Electron Gas Induced by a Submicrometer Periodic PotentialEurophysics Letters, 1989
- Characterization of very narrow quasi-one-dimensional quantum channelsPhysical Review B, 1988