Collector-top GaAs/AlGaAs heterojunction bipolar transistors for high-speed digital ICs
- 13 March 1986
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 22 (6) , 315-316
- https://doi.org/10.1049/el:19860216
Abstract
GaAs/AlGaAs collector-top heterojunction bipolar transistors with magnesium and phosphorus double-implanted external bases were fabricated. A cutoff frequency of 17 GHz and a gate delay time of 63 ps for DCTL were obtained. These results indicate the potential of collector-top HBTs for high-speed ICs.Keywords
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