Selective area oxidation of silicon with a scanning force microscope
- 24 May 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (21) , 2691-2693
- https://doi.org/10.1063/1.109259
Abstract
The use of a scanning force microscope with a metallized tip to do selective area oxidation of silicon is demonstrated. Sub‐100 nm lines have been achieved. Removal of the oxide lines with buffered hydrofluoric acid reveals trenches in the silicon consistent with silicon consumption in SiO2 formation.Keywords
This publication has 11 references indexed in Scilit:
- Nanometer-scale electrochemical deposition of silver on graphite using a scanning tunneling microscopeApplied Physics Letters, 1992
- Nanolithography on semiconductor surfaces under an etching solutionApplied Physics Letters, 1990
- Modification of hydrogen-passivated silicon by a scanning tunneling microscope operating in airApplied Physics Letters, 1990
- Scanning tunneling microscopy studies of semiconductor electrochemistryJournal of Vacuum Science & Technology A, 1990
- Nanometer-scale hole formation on graphite using a scanning tunneling microscopeApplied Physics Letters, 1989
- Surface modification of a-Si:H with a scanning tunneling microscope operated in airJournal of Applied Physics, 1989
- Direct deposition of 10-nm metallic features with the scanning tunneling microscopeJournal of Vacuum Science & Technology B, 1988
- Lift-off metallization using poly(methyl methacrylate) exposed with a scanning tunneling microscopeJournal of Vacuum Science & Technology B, 1988
- Exposure of calcium fluoride resist with the scanning tunneling microscopeJournal of Vacuum Science & Technology B, 1987
- Lithography with the scanning tunneling microscopeJournal of Vacuum Science & Technology B, 1986