Molecular beam epitaxial growth of pseudomorphic InAlAs/InGaAs high electron mobility transistors with high cut-off frequencies
- 1 May 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 150, 1252-1255
- https://doi.org/10.1016/0022-0248(95)80139-4
Abstract
No abstract availableKeywords
Funding Information
- Siemens (01 BM 118/6)
- Bundesministerium für Forschung und Technologie
- Bundesministerium für Bildung und Forschung
This publication has 4 references indexed in Scilit:
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- 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistorsIEEE Transactions on Electron Devices, 1992
- High-performance highly strained Ga/sub 0.23/In/sub 0.77/As/Al/sub 0.48/In/sub 0.52/As MODFET's obtained by selective and shallow etch guide recess techniquesIEEE Electron Device Letters, 1992
- Effect of Si movement on the electrical properties of inverted AlInAs–GaInAs modulation doped structuresApplied Physics Letters, 1991