Gain and noise in very high-gain avalanche photodiodes: theory and experiment
- 19 July 1996
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- Vol. 2859, 288-298
- https://doi.org/10.1117/12.245118
Abstract
Large area silicon avalanche photodiodes have been fabricated with maximum avalanche gains exceeding 10,000 and excellent signal to noise ratios. A model of device performance has been developed in which previously developed general expressions are numerically integrated using actual fabrication parameters. The gain, statistical fluctuations in the gain, electronic noise, and total peak broadening have been computed using this model. The results are in good agreement with measurements. The parameter keff was found to be 7.2 X 10-4, allowing a high signal to noise ratio at gains of several thousand.Keywords
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