0.23 μm gate length MODFETs on InAlAs/InGaAs/InP heterostructure grown by MOVPE

1 August 1991

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 27 (16) , 1426-1427
https://doi.org/10.1049/el:19910894

Abstract

Modulation-doped field effect transistors (MODFETs) with 0.23 μm gate lengths have been fabricated on an InAlAs/InGaAs/InP heterostructure grown by metal organic vapour phase epitaxy (MOVPE/MOCVD). Extrinsic DC transconductance as high as 800 mS/mm, and unity current gain cutoff frequency f_t of over 120 GHz at room temperature have been achieved. These g_m and f_t values compare favourably with the best devices of similar gate length grown by molecular-beam epitaxy (MBE) and are the highest values reported for any device grown by MOVPE.

Keywords

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Monolithically integrated In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As MSM-HEMT receiver grown by OMCVD on patterned InP substrates
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003