Existence of persistent photoconductivity at high temperatures in
- 15 November 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 48 (19) , 14760-14763
- https://doi.org/10.1103/physrevb.48.14760
Abstract
We have observed a persistent photoconductivity effect (PPC) in thin films at the record high temperature of 260 °C. is the first noncompound semiconductor known to exhibit the effect well above room temperature. Our available data seem to rule out macroscopic potential barriers as a possible origin for PPC in . The effect may, instead, be associated with the distortions that the molecule experiences in the presence of localized charge.
Keywords
This publication has 16 references indexed in Scilit:
- Effects of oxygen and illumination on theinsituconductivity ofthin filmsPhysical Review B, 1993
- Polarons inPhysical Review B, 1992
- Solid C60: a new form of carbonNature, 1990
- Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous siliconPhysical Review Letters, 1987
- C60: BuckminsterfullereneNature, 1985
- Persistent Photoconductivity in Doping-Modulated Amorphous SemiconductorsPhysical Review Letters, 1984
- Carrier Recombination Times in Amorphous-Silicon Doping SuperlatticesPhysical Review Letters, 1984
- Hall-Effect Analysis of Persistent Photocurrents in-GaAs LayersPhysical Review Letters, 1979
- Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound SemiconductorsPhysical Review Letters, 1977
- Nonradiative capture and recombination by multiphonon emission in GaAs and GaPPhysical Review B, 1977