UV assisted growth of 100 Å thick SiO 2 at 550°C
- 23 May 1991
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 27 (11) , 909-911
- https://doi.org/10.1049/el:19910570
Abstract
Thin SiO2 films have been grown by UV irradiation at much higher growth rates (more than 50 times) than those achieved during conventional thermal oxidation.Keywords
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