GaN double ifeterojunction field effect transistor for microwave and millimeterwave power applications
- 19 April 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
We report development of a novel AlGaN/GaN/AlGaN double heterojunction field effect tansistor (DHFET) with improved device performance over the conventional single heterojunction GaN FET (SHFET). The GaN DHFETs with low Al content Al/sub 0.04/Ga/sub 0.96/N buffer layer exhibit three orders of magnitude lower subthreshold drain leakage current and almost three orders of magnitude higher buffer isolation than corresponding SHFET devices (600 M/spl Omega//sq. vs. 1 M/spl Omega//sq.). In GaN DHFET's with 0.15 /spl mu/m conventional T-gates we observed 30% improvement in saturated power density and 10% improvement in PAE at 10 GHz over a corresponding SHFET device.Keywords
This publication has 5 references indexed in Scilit:
- Power Performance of AlGaN–GaN HEMTs Grown on SiC by Plasma-Assisted MBEIEEE Electron Device Letters, 2004
- 30-W/mm GaN HEMTs by Field Plate OptimizationIEEE Electron Device Letters, 2004
- AlGaN/InGaN/GaN Double Heterostructure Field-Effect TransistorJapanese Journal of Applied Physics, 2001
- Enhanced Two-Dimensional Electron Gas Confinement Effect on Transport Properties in AlGaN/InGaN/AlGaN Double-HeterostructuresPhysica Status Solidi (b), 1999
- Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructuresJournal of Applied Physics, 1999