Optical activity induced in Bi 4 Ge 3 O 12 waveguides by ion implantation
- 15 March 1990
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 26 (6) , 371-373
- https://doi.org/10.1049/el:19900242
Abstract
This letter reports data for ion Bi4Ge3O12 in which the modified material becomes optically active. The optical rotary power, after implantation and annealing, increases from zero to some 90°/mm. The effect is attributed to an ion beam induced relaxation to a modified BiGeO phase.Keywords
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