Adjustable emissions from silicon-rich oxide films prepared by plasma-enhanced chemical-vapor deposition
- 19 April 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (16) , 2316-2318
- https://doi.org/10.1063/1.123836
Abstract
Observation of sequentially adjustable, intense, and stable emissions at room temperature from amorphous silicon-rich oxide thin films without any thermal annealing is reported. Hydrogenated amorphous silicon-rich oxide (SiOx:N:H, 0<x<2) thin films were deposited by plasma-enhanced chemical-vapor deposition with a mixture of 5% silane in argon and nitrous oxide gases. The strong naked-eye-seeing photoluminescence (blue–white–orange) could be adjusted by changing the process gases flow rate ratio Γ (=[SiH4]/[N2O]). The degree of silicon richness was determined from secondary ion mass spectrometry. The microstructure-bonding configuration was examined by Fourier transform infrared spectroscopy. The implications of these studies for understanding the origins of silicon-based luminescence are discussed.Keywords
This publication has 11 references indexed in Scilit:
- Changes in the Electronic Properties of Si Nanocrystals as a Function of Particle SizePhysical Review Letters, 1998
- Strong ultraviolet photoluminescence from silicon oxide films prepared by magnetron sputteringApplied Physics Letters, 1998
- Room-temperature visible photoluminescence from silicon-rich oxide layers deposited by an electron cyclotron resonance plasma sourceApplied Physics Letters, 1996
- A comparative study of ultraviolet emission with peak wavelengths around 350 nm from oxidized porous silicon and that from SiO2 powderApplied Physics Letters, 1996
- Effect of different preparation conditions on light emission from silicon implanted SiO2 layersJournal of Applied Physics, 1996
- Structural and optical properties of amorphous silicon oxynitrideJournal of Applied Physics, 1996
- Blue photoluminescence and local structure of Si nanostructures embedded in SiO2 matricesApplied Physics Letters, 1995
- Effects of the nearest neighbors and the alloy matrix on SiH stretching vibrations in the amorphous:H (0<r<2) alloy systemPhysical Review B, 1989
- Optical properties of crystalline semiconductors and dielectricsPhysical Review B, 1988
- Optical dispersion relations for amorphous semiconductors and amorphous dielectricsPhysical Review B, 1986