Ga 1− y In y As/InAs x P 1− x (y > 0.53, x > 0) pin photodiodes for long wavelength regions (λ > 2μm) grown by hydride vapour phase epitaxy

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Abstract
pin photodiodes with a 2.3 μm absorption edge are presented, using hydride vapour phase epitaxy. A Ga1−yInyAs (y = 0.72) absorption layer, lattice-mismatched to the InP substrate, was grown on an InAsxP1−x (x = 0–0.33) graded composition buffer layer. Typical dark current was 5 μA (0.03 A/cm2) at −6V. Effective carrier lifetime of 0.05 μs is was estimated from I/V characteristics.