Effect of anode bias on the index of refraction of Al2O3 thin films deposited by dc S-Gun magnetron reactive sputtering
- 1 March 1994
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 12 (2) , 594-597
- https://doi.org/10.1116/1.578840
Abstract
Using direct-current anode bias in an S-Gun magnetron sputtering system during the reactive deposition of Al2O3 increases the index of refraction from 1.52 to 1.70. This effect takes place at less than 75% of the O2 flow rate necessary to convert the sputter cathode from the metal mode to the oxide mode. A second effect of sputtering in the linear portion before the ‘‘knee’’ of the voltage versus O2 flow rate curve (hysteresis curve) is a stable and noise-free deposition.Keywords
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