A new MOSFET with large-tilt-angle implanted drain (LATID) structure
- 1 June 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (6) , 300-302
- https://doi.org/10.1109/55.723
Abstract
The LATID device features the elimination of the sidewall spacer and self-alignment of n/sup -/ large tilt angle (LAT) and n/sup +/ implants to the same gate edge. Even without a spacer and a heavy drive-in, the LATID can achieve both a sufficiently long L/sub n-/ and an n/sup +/ gate overlap. The LATID achieves improved current drive by more than 50% and improved hot-carrier lifetime by more than three orders of magnitude as compared with a conventional lightly doped drain. The LATID technique is most promising for applications to submicrometer ULSI under 5-V operation.<>Keywords
This publication has 11 references indexed in Scilit:
- A new isolation method with boron-implanted sidewalls for controlling narrow-width effectIEEE Transactions on Electron Devices, 1987
- Depth Profiles of Boron Atoms with Large Tilt‐Angle ImplantationsJournal of the Electrochemical Society, 1986
- A theoretical study of gate/Drain offset in LDD MOSFET'sIEEE Electron Device Letters, 1986
- A novel submicron LDD transistor with inverse-T gate structurePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- Asymmetrical characteristics in LDD and minimum-overlap MOSFET'sIEEE Electron Device Letters, 1986
- Submicrometer device design for hot-electron reliability and performanceIEEE Electron Device Letters, 1985
- Optimum design of n+-n-double-diffused drain MOSFET to reduce hot-carrier emissionIEEE Transactions on Electron Devices, 1985
- A new substrate and gate current phenomenon in short-channel LDD and minimum overlap devicesIEEE Electron Device Letters, 1985
- The effect of high fields on MOS device and circuit performanceIEEE Transactions on Electron Devices, 1984
- Structure-enhanced MOSFET degradation due to hot-electron injectionIEEE Electron Device Letters, 1984