Limited reaction processing: Growth of III-V epitaxial layers by rapid thermal metalorganic chemical vapor deposition
- 22 December 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (25) , 1720-1722
- https://doi.org/10.1063/1.97226
Abstract
We have demonstrated a new technique for III-V epitaxial layer growth combining rapid thermal processing and metalorganic chemical vapor deposition. This technique yields enhanced layer thickness control and abrupt interfaces while maintaining a high growth rate (≥10 Å/s). Multilayer structures have been grown with smooth, featureless surfaces and good electrical quality (Nd=2×1016 cm−3, μn=3000 cm2/V s) using trimethylarsenic and trimethylgallium.Keywords
This publication has 4 references indexed in Scilit:
- Thin, highly doped layers of epitaxial silicon deposited by limited reaction processingApplied Physics Letters, 1986
- Limited reaction processing: Silicon epitaxyApplied Physics Letters, 1985
- Rapid Thermal Annealing of As in SiMRS Proceedings, 1985
- Metal organics vapour phase epitaxy of GaAs : Raman studies of complexes formationRevue de Physique Appliquée, 1985