Study of CuInSe₂ Formation Kinetics in the Selenization Process by Raman Spectroscopy

1 March 1991

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 30 (3R) , 442-446
https://doi.org/10.1143/jjap.30.442

Abstract

Formation kinetics of polycrystalline CuInSe₂ films in selenization of Cu/In/Se stacked layers was studied using Raman spectroscopy. Raman spectra of the films clearly show a structural change of the film at elevated temperatures. It is concluded that Cu is selenized preferentially at low temperatures around 200°C and that the CuInSe₂ phase is formed at temperatures above 250°C.

Keywords

This publication has 5 references indexed in Scilit:

Deposition of CuInSe/sub 2/ films by a two-stage process utilizing E-beam evaporation
IEEE Transactions on Electron Devices, 1990
Characterization of Copper Indium Diselenide Thin Films by Raman Scattering Spectroscopy for Solar Cell Applications
Japanese Journal of Applied Physics, 1989
CuInSe2 films and solar cells obtained by selenization of evaporated Cu-In layers
Applied Physics Letters, 1989
Lattice vibrational, thermal and mechanical properties of CuInSe2
Solar Cells, 1986
Raman and infrared spectra of the ${(Cu In {Se}_{2})}_{1 - x} - {(2 Zn Se)}_{x}$ system
Physical Review B, 1976

Study of CuInSe2 Formation Kinetics in the Selenization Process by Raman Spectroscopy

Abstract

Keywords

Study of CuInSe₂ Formation Kinetics in the Selenization Process by Raman Spectroscopy