Electrical and Optical Properties of Stannite-Type Quaternary Semiconductor Thin Films
- 1 November 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (11R) , 2094-2097
- https://doi.org/10.1143/jjap.27.2094
Abstract
Quaternary stannite-type semiconductor films of Cu2CdSnS4 and Cu2ZnSnS4 with (112) orientation were deposited on heated glass substrates using atom beam sputtering. These p-type films showed resistivities which were decreasing functions of the substrate temperature up to 240°C. The films had an absorption coefficient larger than 1 × 104 cm-1 in the visible wavelength range. The direct optical band gaps of the (112) oriented polycrystalline films were estimated as 1.06 eV and 1.45 eV for Cu2CdSnS4 and Cu2ZnSnS4, respectively.Keywords
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