On the relation between microwave series resistance, capacitance, and output power of IMPATT diodes

1 July 1969

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 57 (7) , 1341-1342
https://doi.org/10.1109/proc.1969.7268

Abstract

Measurements at X-band of capacitance C, microwave series resistance R, and CW output power P, on Si IMPATT diodes with epitaxial layers of varying thickness are used to show that P = (constant)/(RC²). This relation is known from the large-signal theory of the ideal Read structure, but is found to be valid far beyond its theoretical limits.

Keywords

CAPACITANCE
POWER GENERATION
DIODES
EPITAXIAL LAYERS
ELECTRICAL RESISTANCE MEASUREMENT
POWER MEASUREMENT
CURRENT MEASUREMENT
THICKNESS MEASUREMENT
SUBSTRATES
MICROWAVE MEASUREMENTS

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