A C-Band 10 Watt GaAs Power FET
- 23 March 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 84 (0149645X) , 439-440
- https://doi.org/10.1109/mwsym.1984.1131822
Abstract
A new GaAs high power FET has been developed. The FET chip with 10.8mm gate-width employs a deep recess, via hole PHS, anair bridge gate-source cross-over and novel gate feeder network technology. The internally matched device which consists of two chips (total gate-width; 21.6mm) has realized 10 watts of 1dB gain compression power with 8dB gain and 43% power added efficiency at 8GHz.Keywords
This publication has 1 reference indexed in Scilit:
- A novel Via Hole P.H.S. structure in K-band power GaAs FETPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1981