Plasma-anodized thin-film capacitors for integrated circuits
- 1 January 1964
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 52 (12) , 1465-1468
- https://doi.org/10.1109/PROC.1964.3431
Abstract
This paper presents the characteristics of Al2O3capacitors formed by the relatively new technique of gaseous plasma anodization. This process can be incorporated into a thin-film deposition process cycle thereby providing the advantage of minimizing contamination possibilities. The formation technique is briefly described and device properties are presented in detail.Keywords
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