Silicide induced pattern density and orientation dependent transconductance in MOS transistors
- 22 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 497-500
- https://doi.org/10.1109/iedm.1999.824201
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- A transmission line model for silicided diffusions: Impact on the performance of VLSI circuitsIEEE Transactions on Electron Devices, 1982