Contact potential difference measurements on real semiconductor surfaces by means of a point vibrating electrode
- 1 January 1962
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 2 (10) , 1312-1316
- https://doi.org/10.1002/pssb.19620021010
Abstract
Changes of contact potential are observed in inversion layers induced in germanium by applying a reverse bias voltage in the vicinity of a p‐n junction. Comparison is made with changes of surface potential calculated from simultaneous measurements of channel conductance. Agreement is good, showing that, under certain conditions, changes in the potential drop through the oxide layer can be neglected.Keywords
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