Phase-controlled metal-organic chemical vapor deposition epitaxial growth of GaN on GaAs(100) using NH3
- 30 June 1995
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 32 (1-2) , 69-74
- https://doi.org/10.1016/0921-5107(94)01149-4
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- MOVPE growth of cubic GaN on GaAs using dimethylhydrazineJournal of Crystal Growth, 1992
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Epitaxial growth and characterization of zinc-blende gallium nitride on (001) siliconJournal of Applied Physics, 1992
- Epitaxial growth of GaAs and GaN by gas source molecular beam epitaxy using organic group V compoundsJournal of Crystal Growth, 1992
- First-principles total-energy calculation of gallium nitridePhysical Review B, 1992
- Structure Control of GaN Films Grown on (001) GaAs Substrates by GaAs Surface PretreatmentsJapanese Journal of Applied Physics, 1991
- Epitaxial growth of cubic and hexagonal GaN on GaAs by gas-source molecular-beam epitaxyApplied Physics Letters, 1991
- An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Growth of cubic phase gallium nitride by modified molecular-beam epitaxyJournal of Vacuum Science & Technology A, 1989
- Hot electron microwave conductivity of wide bandgap semiconductorsSolid-State Electronics, 1976